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MXIC Flash technology reliably stores memory contents even aftererase and program cycles. The MXIC cell is designed to optimize daatsheet erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.

Advanced Micro Devices (AMD) 29F Datasheet.

The MX29F uses a 5. The highest degree of latch-up protection is achieved with MXIC’s proprietary non-epi process. The standard MX29F offers access time as fast as 55ns, allowing operation of high-speed microprocessors without datasheef states.

The MX29F uses a command register to manage this functionality. All sectors are 64 Kbytes in size.

A18 A16 A15 A A7 A6 A5 A4. The Automatic Program- ming algorithm makes the external system do not need to have time out sequence nor to verify the data pro- grammed.

29F040 PDF Datasheet浏览和下载

The typical chip programming time at room temperature of the MX29F is less than 4 seconds. Typical erasure at room temperature is accomplished in less than 4 second.


The Automatic Erase algorithm au- tomatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. Sector erase modes datawheet sectors of the array to be erased in one erase cycle. The Automatic Sector Erase algorithm automatically programs the specified sector s prior to electrical erase.

MXIC’s Automatic Programming algorithm require the user to only write program set-up commands including 2 un- lock write cycle and A0H and a program command pro- gram data and address.

The device automatically times the programming pulse width, provides the program veri- fication, and counts the number of sequences. A status bit similar to DATA polling and a status bit toggling be- tween consecutive read cycles, provide feedback to the user as to the status of the programming operation. MXIC’s Automatic Erase algorithm requires the user to write commands to the command register using stand- ard microprocessor write timings.

The device will auto- matically pre-program and verify the entire array.

Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecu- tive read cycles provides feedback to the user as to the status of the programming operation.

Register contents serve as inputs to an internal state- machine which controls the erase and programming cir- cuitry. During write cycles, the command register inter- nally latches address and data needed datashfet the program- ming and erase operations. During a system write cycle, addresses are latched ddatasheet the falling edge of WE or CE, whichever happens later, and data are latched on the rising edge of WE or CE, whichever happens first.


During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode.

29F Datasheet(PDF) – Advanced Micro Devices

After the state machine has completed its task, it will allow the command regis- ter to respond to its full command set. C2H for manufacture code, A4H for device code. The system should generate the following address patterns: For Sector Protect Verify Operation: If read out data is 01H, it means the sector has been protected.

Device operations are selected by writing specific ad- dress and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode.

Re: In-situ flash programming for N8VEM, Zeta and N8

Table 1 defines the valid register command sequences. Either of the two reset command sequences will reset the device when applicable.

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