IRFZ BVDSS = 60 V. RDS(on) = Ω. ID = 50 A. ± . .. Obsolete. This datasheet contains the design specifications for. IRFZ44 Transistor Datasheet, IRFZ44 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Advanced HEXFET® Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low.
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At the time I did not understand the SOA curves. Any idea what the max current might be at 30V and 40V so as not to cause damage? Otherwise, I may have to change it all to a 2N and make a mess. The electronic load does work badly smoothed 40V DC 3A. I have tested it only for few seconds at this power.
However, I have tested it a lot at V and 1A. Seems to hold up well. I have a large heatsink with a fan on it. Case temp does not go over 40C. Added on APR Well, the mosfet died. So to answer my own question I tested today at It was not even warm, maybe only at 35C or so. In hindsight, I should have added a couple of resisters upstream of the drain to lower the voltage across the mosfet.
It should probably tolerate a lot if the Vds is limited to only about 10V. This also means the SOA curves in the datasheet are probably not all correct. Extrapolating the points where the mosfet worked and did not work the imaginary DC operation line does not give me a line parallel to the other lines at difference pulse widths. So, they too may in reality be curving downwards much more at higher voltages i. This one failed with only 2.
So that probably explains the dataasheet dc line in the SOA curve. This mosfet will fail at above 2A at all voltages below 20V. The dc curve is a flat line at about 2A till 20V, and falls sharply after that to mA at 40V. The IRFZ44N is a hexFET designed for switching applications so using it in linear applications runs a risk of destroying it and you being left scratching your head as to why it went pop.
It might not even be very dxtasheet at all.
Yes, a MOSFET will go into thermal datahseet if the gate-source voltage is below the zero-temperature-coefficient threshold. This isn’t some theoretical annoyance that doesn’t really happen. I can vouch for seeing it on a design I was asked to look at.
On semi document on thermal instability. Infineon document on thermal instability. Nasa document explaining it.
IRFZ44 MOSFET. Datasheet pdf. Equivalent
Figure 1 and figure 2 describe the DC operations dtasheet this measurement being made with a 20 us pulse: It’s made with a pulse to prevent self-heating and the remotest possibility of thermal runaway at lower gate voltages; note how a gate voltage of 4. Damage could be caused by overheat in your case DC load.
You have to work with power dissipation figures. It is huge difference between 3A 40V and 3A 5V.
On semi document on thermal instability Infineon document on thermal instability Ditto from Fairchild Nasa document explaining it Which figure? This is the thermal runaway I refer to. Andy aka k fatasheet Within about a milli second, a hot spot can develop in the hexfet and a localized temperature of over centigrade results and blows a hole in it before the feedback loop can respond.
Tony EE rocketscientist 62k 2 21 The continuous current is when the mosfet is fully on.
IRFZ44, SiHFZ44 product information
VGS must be greater than 4V to lower Ron. Can you please link the datasheet? Did you not understand my answer with Temp rise?